3G power amplifier for dual-band handsets for EGSM network
ANADIGICS, Inc. announced its new AWT6224 dual-band HELP3™ power amplifier (PA) module designed specifically for use in 3G dual-band handsets for EGSM network deployments worldwide, especially Europe. The AWT6224 3G power amplifier addresses the demand for increased integration in dual-band handsets for EGSM network deployments. The new AWT6224 PA delivers the 3G HSPA performance required by two European bands in a single 3 x 5mm package. Its smaller size reduces the RF board area required for multi-band phone designs utilizing Qualcomm’s latest generation chip-sets.
The new AWT6224 PA is a dual-band module that supports both IMT (UMTS2100) and EGSM (UMTS900) band operations. The AWT6224 is designed to meet requirements for WCDMA and HSPA operation with Qualcomm’s latest chipsets. The small footprint 3 mm x 5 mm x 1 mm surface mount RoHS compliant package contains independent RF PA paths to ensure optimal performance in both frequency bands, while achieving a 25% PCB space savings compared with solutions requiring two single-band PAs. It incorporates the company’s proprietary HELP3™ technology, which reduces average current consumption by 75% and provides up to 25% increased talk time in 3G handsets. The PA also includes a built-in voltage regulator and CMOS-compatible logic controls.
The AWT6224 incorporates ANADIGICS’ HELP3™ technology to provide low power consumption without the need for an external voltage regulator. Two operating modes provide optimum efficiency at high and medium/low power output levels, thereby dramatically increasing handset talk-time and standby-time. Its built-in voltage regulator eliminates the need for external voltage regulation and load switches. The 3 mm x 5 mm x 1mm surface mount package incorporates matching networks optimized for output power, efficiency and linearity in a 50 Ω system.
The AWT6224 incorporates ANADIGICS’ proprietary InGaP-Plus™ technology for state-of-the-art reliability, temperature stability and ruggedness. The module is manufactured using a material set consistent with the European Union’s Restriction of Hazardous Substances (RoHS).
The package pinout was chosen to enable handset manufacturers to easily route VCC to both power amplifiers and simplify control with a common VMODE pin. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness.
